ИАПУ ДВО РАН

Вековшинин Юрий Евгеньевич

Должность: младший научный сотрудник

Подразделение: Лаборатория технологии двумерной микроэлектроники (№101)

Email: vekovshinin98@mail.ru

Публикации:

Статьи в журналах

2021. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D. V. Gruznev, A.N. Mihalyuk, Y.P. Ivanov, D.A. Olyanich, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Metal sheet of atomic thickness embedded in silicon. ACS Nano, 2021, Vol.15, No.12, 19357–19363.
2024. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, D.A. Olyanich, T.V. Utas, A.N. Mihalyuk, A.V. Zotov, A.A. Saranin. Effect of embedded Cr on the structural phase transition of In/Si(111)4×1. Surface Science, 2024, Vol.739, P.122400-6.
2020. A.Y. Tupchaya, L.V. Bondarenko, Y.E. Vekovshinin, A.A. Yakovlev, A.N. Mihalyuk, D.V. Gruznev, C.R. Hsing, C.M. Wei, A.V. Zotov, A.A. Saranin. Double- atomic-layer Tl-Mg compound on a Si(111) surface with advanced electronic properties. Physical Review B, 2020, Vol. 101, P. 235444-7
2020. L.V. Bondarenko, A.N. Mihalyuk, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.V. Zotov, A.A. Saranin. Au induced reconstructions of Si(111) surface with ordered and disordered domain walls. Physical Review B, 2020, Vol. 101, P. 075405-9
2024. L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Atomic-scale observations of the immiscible melted metals confined in a single-atom layer. Physica Status Solidi - Rapid Research Letters, 2024, Vol,18, Iss.2, P. 2300254-5.
2020. L.V. Bondarenko, A.Y. Tupchaya, A.N. Mihalyuk, S.V. Eremeev, A.V. Matetskiy, N.V. Denisov, Y.E. Vekovshinin, A.V. Slyshkin, D.V. Gruznev, A.V. Zotov, A.A. Saranin. Fabrication and characterization of a single monolayer NiSi2 sandwiched between a Tl capping layer and a Si(111) substrate. 2D Materials, 2020, Vol. 7, No.2, P.025009-9.
2022. V.V. Mararov, T.V. Utas, L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, A.V. Zotov, A.A. Saranin. Self-assembly of C60 layers at Tl/NiSi2 atomic sandwich on Si(111). Surface Science, 2022, Vol.715, p.121934-5.
2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D. V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Pb/NiSi2 atomic sandwich on Si(111). Surface Science, 2022, Vol.716, P.121966-6.
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, V.G. Kotlyar, T.V. Utas, A.N. Mihalyuk, N.V. Denisov, A.V. Zotov, A.A. Saranin. Alloying with Ga promotes superconductivity in single-atomic Pb layer on Si(111). Journal of Alloys and Compounds, 2023, Vol. 969, P. 172453-5.
2022. A.Y. Tupchaya, L.V. Bondarenko, A.A. Yakovlev, Y.E. Vekovshinin, A.N. Mihalyuk, D.V. Gruznev, N.S. Denisov, A.V. Matetskiy, A.Yu. Aladyshkin, A.V. Zotov, A.A. Saranin. 2D system incorporating perforated Mg sheet sandwiched between Pb layer and Si(111). Applied Surface Science, 2022, Vol.589, P.152951-6
2023. A.N. Mihalyuk, L.V. Bondarenko, A.Y. Tupchaya, Yu.E. Vekovshinin, T.V. Utas, D.V. Gruznev, Jyh-Pin Chou, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Large-scale thallene film with emergent spin-polarized states mediated by tin intercalation for spintronics applications. Materials Today Advances, 2023, Vol.18, P.100372-7.
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, T.V. Utas, A.N. Mihalyuk, N.V. Denisov, A.V. Zotov, A.A. Saranin. Dense single-atomic 14×√3-reconstructed Pb layer on Si(111) with advanced structural and superconducting properties. Physical Review B, 2023, V.108, P.115428-9.
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, D.A. Olyanich, T.V. Utas, V.S. Zhdanov, A.V. Zotov, A.A. Saranin. Few monolayer Ga film on Si(111): Illusive gallenene formation and localization instead of superconductivity. Mol. Syst. Des. Eng., 2023, Vol.8, P.604-610.
2022. A.N. Mihalyuk, Y.E. Vekovshinin, L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Insights into the electronic properties of PbBi atomic layers on Ge(111) and Si(111) surfaces. Frontiers in Materials, 2022, Vol. 9, P.882008-10.
2022. A.N. Mihalyuk, D.V. Gruznev, L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, S.V. Eremeev, A.V. Zotov, A.A. Saranin. 2D heavy fermion CePb3 kagome material on silicon: Emergence of unique spin polarized states for spintronics. Nanoscale, 2022, Vol.14, P.14732-14377.
2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Single- and double-atomic In layers grown on top of a single-atomic-layer NiSi2 on Si(111). Physical Review B, 2022, V.106, P.035412-8.
2021. A.N. Mihalyuk, L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, Y.E. Vekovshinin, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. One-dimensional spin-polarized electron channel in the two-dimensional PbBi compound on silicon. Physical Review B, 2021, Vol. 104, P.125413-7.
2024. A.N. Mihalyuk, Yu.E. Vekovshinin, A.Y. Tupchaya, L.V. Bondarenko, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Promoting spin-polarized states in Bi/Si(111) interface mediated by Ba intercalation for advanced spintronics applications. Scripta Materialia, 2024, Vol. 239, P. 115807-6.
2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, V.G. Kotlyar, T.V. Utas, A.N. Mihalyuk, A.V. Matetskiy, N.V. Denisov, A.V. Zotov, A.A. Saranin. Gold interlayer promotes superconductivity in single- and double-atomic Pb layers on Si(100). Journal of Physical Chemistry Letters, 2022, Vol.13, P.10479-10485.