Субботин Евгений Юрьевич
кандидат физико-математических наук
старший научный сотрудник
Лаборатория функциональных материалов и систем фотоники (№24)
332
2-68
subbotineu@iacp.dvo.ru
- 2022. N.G. Galkin, K.N. Galkin, A.V. Tupkalo, E.Yu. Subbotin, I.M. Chernev, A.V. Shevlyagin and V.V. Khovailo / Conduction Mechanisms and Thermoelectric Properties of Semimetallic CaSi and CaSi2 Films on Si(100) and Si(111) Substrates // Physics of the Solid State, 2022, Vol. 64, No. 12, pp. 616–623
- 2021. Механизмы проводимости и термоэлектрические свойства полуметаллических пленок CASI и CASI2 на подложках Si(100) и Si(111) / Н. Г. Галкин, К. Н. Галкин, А. В. Тупкало [и др.] // Химическая физика и мезоскопия. – 2021. – Т. 23. – № 2. – С. 165-175.
- 2018. Goroshko D. et al. Thermoelectric properties of nanostructured material based on Si and GaSb //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 102-109.
- 2019. Galkin N. G. et al. Conductive CaSi2 transparent in the near infra-red range //Journal of Alloys and Compounds. – 2019. – Т. 770. – С. 710-720.
- 2017. Goroshko D. L. et al. Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure //AIP Conference Proceedings. – AIP Publishing LLC, 2017. – Т. 1874. – №. 1. – С. 030015.
- 2015. Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
- 2020. Goroshko D. L. et al. Formation and thermoelectric properties of the n-and p-type silicon nanostructures with embedded GaSb nanocrystals //Japanese Journal of Applied Physics. – 2020. – Т. 59. – №. SF. – С. SFFB04.
- 2020. Goroshko D. et al. Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation //Semiconductor Science and Technology. – 2020. – Т. 35. – №. 10. – С. 10LT01.
- 2021. Galkin N. G. et al. Multilayer Heterostructures with Embedded CrSi2 and β-FeSi2 Nanocrystals on Si (111) Substrate: From the Formation to Photoelectric Properties //Solid State Phenomena. – Trans Tech Publications Ltd, 2020. – Т. 312. – С. 45-53.
- 2017. Субботин Е. Ю. и др. НАНОКРИСТАЛЛЫ GASB ВЫРАЩЕННЫЕ МЕТОДОМ ТВЁРДОФАЗНОЙ ЭПИТАКСИИ И ВСТРОЕННЫЕ В МОНОКРИСТАЛЛИЧЕСКИЙ КРЕМНИЙ //Современные проблемы физики и технологий. – 2017. – С. 166-167.
- 2022. A.V. Shevlyagin et al. Semimetal hR6-CaSi2 thin film: a transparent contact for Si optoelectronics // Journal of Alloys and Compounds. - 2022. - T.910. - P. 164893.
- 2018. Chusovitin E. et al. Formation of a thin continuous GaSb film on Si (001) by solid phase epitaxy //nanomaterials. – 2018. – Т. 8. – №. 12. – С. 987.
- 2018. Goroshko D. et al. Photoconductivity and conductivity processes in Si-Sn films grown on Si (100) substrate at room temperature //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 95-101.